Characterization of carbon microspheres grown by HVPE
نویسندگان
چکیده
منابع مشابه
HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN 75 HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN
For the GaN material system, one reason for the breaking down of the efficiency is the socalled quantum confined Stark effect (QCSE). Since today’s LEDs are grown in the common [0001] (c-)direction, the internal polarization fields are perpendicular to the quantum wells. The cause of these internal fields are spontaneous and piezoelectric polarization. The reason for the latter is mechanical st...
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GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explai...
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We have investigated the growth of nonpolar GaN templates by hydride vapor phase epitaxy (HVPE). This includes a systematic study of misoriented r-plane sapphire wafers with a miscut angle up to ±1◦ towards the c-axis of the crystal as starting substrates. Starting with an AlN nucleation layer approximately 3.3μm of nonpolar a-plane GaN are grown by metalorganic vapor phase epitaxy (MOVPE). The...
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The purpose of this study was to prepare and characterize microspheres loaded by cyclosporine A(CyA)-cyclodextrin (CD) complex. To achieve this goal, PLGA microspheres loaded by CyA CD complex were prepared by multiple emulsificationsolvent evaporation methods.Morphology, size, encapsulation efficiency and drug release from these microspheres were evaluated. Microscopic evaluation of mi...
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ژورنال
عنوان ژورنال: Journal of the Korean Crystal Growth and Crystal Technology
سال: 2015
ISSN: 1225-1429
DOI: 10.6111/jkcgct.2015.25.2.062